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| DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA Transistors Digital transistors (built in resistor) DTC115TH / DTC115TUA / DT115TKA / DTC115TSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. !External dimensions (Units : mm) DTC115TH 1.6 0.85 0.27 (1) 0.5 0.5 (3) (2) 0.12 0.7 1.0 1.6 ROHM : EMT3H EIAJ : SC-89 (1) Emitter (2) Base (3) Collector DTC115TUA (1) 0to0.1 0.65 0.65 0.7 0.3 (3) 1.25 2.1 0.15 !Equivalent circuit B R1 0.2 (2) C E 0.1to0.4 0to0.1 0.9 1.3 2.0 ROHM : UMT3 EIAJ : SC-70 Each lead has same dimensions E : Emitter C : Collector B : Base (1) Emitter (2) Base (3) Collector DTC115TKA 0.4 (3) (1) 1.6 2.8 0.15 0.3to0.6 0to0.1 0.8 0.95 0.95 (2) ROHM : SMT3 EIAJ : SC-59 Each lead has same dimensions (1) Emitter (2) Base (3) Collector DTC115TSA 3 4 2 (15Min.) 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 ROHM : SPT EIAJ : SC-72 Taping specifications (1) Emitter (2) Collector (3) Base DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA Transistors !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DTC115TH Collector power DTC115TUA / DTC115TKA dissipation DTC115TSA Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 150 200 300 150 -55~+150 Unit V V V mA mW C C !Packaging, marking, and packaging specifications Part No. Package Marking Packaging code Basic ordering unit (pieces) DTC115TH EMT3H 09 T2L 8000 DTC115TUA UMT3 09 T106 3000 DTC115TKA SMT3 09 T146 3000 DTC115TSA SPT TP 5000 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. 50 50 5 100 70 Typ. 250 100 250 Max. 0.5 0.5 0.3 600 130 Unit V V V A A V k MHz IC=50A IC=1mA IE=50A VCB=50V VEB=4V IC/IB=1mA/0.1mA IC=1mA, VCE=5V VCE=10V, IE=-5mA, f=100MHz Conditions Transition frequency Transition frequency of the device. |
Price & Availability of DT115TKA
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